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Fabrication, characterization and analysis of ITO/n-Si Schottky photodetector
Author(s)
Ueamanapong, Surada
Srithanachai, Itsara
Pengpad, Putapon
Niemcharoen, Surasak
Poyai, Amporn
Supadech, Somkiet
Date Issued
July 30, 2010
Type
Conference Paper
Abstract
In this article, we have studied contact between indium tin oxide (ITO) and n-type silicon. First, the characteristics of ITO thin films have been identified. The films have high transparent and low resistivity (∼88 % of transmittance and 2.8×10-3 Ω-cm). Fabrication of the ITO/n-Si photodetector was presented which was ITO thin layer deposited on 10 Ω-cm resistivity silicon wafer by R.F. sputter method. Finally, a study of characteristics of the photodetector such as I-V characteristics, C-V characteristics, and frequency response has been done. The photodetectors have built in voltage (Vbi) about 0.26 V, the dark current of 5 μA and light current of 1.5 mA at 25,000 lux, 5V. Capacitance and frequency response are about 110 pF and 120 kHz, respectively.
Citation
Ecti Con 2010 the 2010 Ecti International Conference on Electrical Engineering Electronics Computer Telecommunications and Information Technology, 776-779, 2010