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A physical DC model of short channel MOS transistor using trapezoidal Gaussian surface
Author(s)
Chaisirithavomkul, Weerayoot
Date Issued
December 1, 2000
Type
Conference Paper
Abstract
A physical dc model for short channel MOSFET is presented. The model accounts for several second order effects including the vertical and horizontal mobility degradations, velocity saturation, the parasitic source and drain resistances and the channel length modulation. Accurate electric field around the drain end is obtained through the Quasi Two Dimensional Approximation (QTDA) using Gaussian surface with trapezoidal shape. The theoretical predictions of the model show good agreement with the experimental data available in the literature over a wide range of biasing conditions. © 2000 IEEE.
Citation
IEEE International Conference on Semiconductor Electronics Proceedings ICSE, 24-28, 2000