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An analytical transit time model for short channel MOSFET's
Author(s)
Date Issued
December 1, 2000
Type
Conference Paper
Abstract
An analytical transit time model for short channel MOSFET is presented. Several second order effects such as short channel and narrow width effects, mobility degradation, parasitic drain and source resistance, velocity saturation and channel length modulation are included in the model. The model shows good agreements with the experimental and two dimensional numerical data over a wide range of biasing conditions. © 2000 IEEE.
Citation
IEEE International Conference on Semiconductor Electronics Proceedings ICSE, 72-75, 2000