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  4. Effect of annealing temperature on TiO2 structured films by the glancing angle deposition with incline spinning substrate on rotating holder method
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Effect of annealing temperature on TiO2 structured films by the glancing angle deposition with incline spinning substrate on rotating holder method

Author(s)
Mekla, Vatcharinkorn
Pukird, Supakorn
Porntheerapat, Supanit
Nukeaw, Jiti
Date Issued
October 13, 2011
Type
Conference Paper
DOI
10.1109/DSR.2011.6026828
Abstract
This work reports the effects of annealing on the TiO2 thin films prepared by the GLAD technique with incline spinning substrate on rotating holder (ISSRH) by using the electron beam evaporation. The prepared films were heated at 500 C , 600 C and 700 C for 2 hr in air. The microstructure of films was studied by UV- visible photometer, X-ray diffraction, XRD and field emission scanning electron microscope, FE-SEM. The results showed the sample films exhibited continuity distribution of the crystalline. The XRD peaks of anatase phase were increased slightly vary with annealing temperature. The porosity of films has been changed with increasing temperature. The film with annealing at 500 C showed the percentage of transferring range of 442-800 nm wavelengths and the maximum absorption of light at 418 nm wavelengths. The calculation evidenced the energy band gap of TiO2 nanostructures was around 3.41 eV. © 2011 IEEE.
Citation
2011 Defense Science Research Conference and Expo Dsr 2011, 2011
Subjects

Anaste

Annealing

Electron Beam Evapora...

GLAD

ISSRH

RUtile

TiO2

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