Structure properties of cubic-AIN grown by reactive gas-timing RF magnetron sputtering

Kietipaisalsophon, N.; Bunjongpru, W.; Techitdheera, W.; Nukeaw, J.

doi:10.1109/ICIT.2002.1189378

Structure properties of cubic-AIN grown by reactive gas-timing RF magnetron sputtering

Author(s)

Kietipaisalsophon, N.

Bunjongpru, W.

Techitdheera, W.

Nukeaw, J.

Date Issued

January 1, 2002

Type

Conference Paper

DOI

10.1109/ICIT.2002.1189378

Abstract

The structure properties of aluminum nitride (A1N) thin films were investigated by X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM). Using rf magnetron sputtering, the reactive gas-timing technique was successfully applied to grow cubic-AIN thin films. The XRD patterns of all deposited A1N films showed orientation of cubic structure in (111) and (200) planes. The lattice constant and grain size were calculated and correlated with the flow rate of N2 gas. The FESEM images showed the surface morphology of nano-particles. The nanocrystalline A1N particle sizes increased with increasing flow rate of N2.

Citation

Proceedings of the IEEE International Conference on Industrial Technology, 2, 1365-1367, 2002

Subjects

Cubic-AIN

Nano-particle

Nanocrystalline

Reactive gas-timing r...