Loading...
High sensitive nanocrystal titanium nitride EG-FET pH sensor
Author(s)
Rayanasukha, Yossawat
Porntheeraphat, Supanit
Bunjongpru, Win
Pankiew, Apirak
Jeamsaksiri, Wutthinan
Srisuwan, Awirut
Chaisriratanakul, Woraphan
Hruanun, Charndet
Poyai, Amporn
Date Issued
October 29, 2013
Type
Conference Paper
Abstract
Solid state pH-sensor device with high efficiency has successfully prepared by using TiN thin film as sensing membrane of extended gate field effect transistor (EG-FET) device. This research has described the physical properties and sensing characteristics of TiN membrane thin film which deposited on SiO2/Si substrate through reactive D.C. magnetron sputtering system. Thenanocrytal-TiNwith anatasestructure depended on substrate heating conditions was revealed from glancing angle x-ray diffraction. The IDS-VGS measurement in the standard buffer solutions showed that the sensitivity of fabricated TiN-EGFET pH deviceis 59.82mV/pH. © (2013) Trans Tech Publications, Switzerland.
Citation
Advanced Materials Research, 802, 232-236, 2013