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Light-response characteristics of platinum doped silicon photodetector
Author(s)
Nararug, Budsara
Ueamanapong, Surada
Srithanachai, Itsara
Janprapha, Supakorn
Suwanchatree, Ai Lada
Niemcharoen, Surasak
Klunngien, Nipapan
Date Issued
November 4, 2013
Type
Conference Paper
Abstract
The purposeof this research article is present electrical characteristic of Pt-doped silicon photodetector compare with undoped silicon photodetector. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Pt-doped detector were investigated. In this experiment, the results of Pt-doped detector show that the dark currentisobviously decreased and the photocurrent is decreased about 9 to 10 orders. Furthermore, the capacitance characteristic isslightly increased about 0.15 pF. The effects platinum on silicon indicated the carrier in silicon have been changed. © (2013) Trans Tech Publications, Switzerland.
Citation
Advanced Materials Research, 811, 196-199, 2013