A Bidirectional DC Model of Hot-Carrier-Induced nMOSFET Degradation

Kasemsuwan, Varakom; Chaisirithavomkul, Weerayoot

doi:10.1109/MWSCAS.2003.1562269

A Bidirectional DC Model of Hot-Carrier-Induced nMOSFET Degradation

Author(s)

Kasemsuwan, Varakom

Chaisirithavomkul, Weerayoot

Date Issued

January 1, 2003

Type

Conference Paper

DOI

10.1109/MWSCAS.2003.1562269

Abstract

A bidirectional DC model of hot-carrier-induced nMOSFET degradation using exponential interface state profile is proposed. A single physically based exponential expression to describe localized distribution of the interface states along the channel is employed. The saturation voltage as a function of a position along the channel due to localized interface states is taken into account. Several short-channel effects including vertical and lateral field degradations, saturation velocity, parasitic source-drain resistances, channel length modulation are included. The predictions of the model agree well with the experimental data.

Citation

Midwest Symposium on Circuits and Systems, 1, 265-268, 2003