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Development a novel model of threshold voltage of NMOS with temperature dependence and narrow channel width
Author(s)
Date Issued
September 6, 2016
Type
Conference Paper
Abstract
In paper, a development a novel model of threshold voltage of NMOS with temperature dependence and narrow channel width was presented. The models have been developed including the temperature affect of surface potentials, intrinsic carrier concentration and energy band gap. The threshold voltages were measured by the linear extrapolation methodology. The temperature dependence and the body-bias dependence of threshold voltage model of a big NMOS and a narrow channel width NMOS are proposed. The results show that, the measured threshold voltage compared with the development threshold voltage model was low level error.
Citation
2016 13th International Conference on Electrical Engineering Electronics Computer Telecommunications and Information Technology Ecti Con 2016, 2016
Subjects