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Influence of Temperature to Electron Mobility on Top of Channel in 14 nm n-FinFET
Author(s)
Patcharasardtra, Nuttapong
Date Issued
January 1, 2017
Type
Conference Paper
Abstract
he temperature behavior that influential to the electron mobility on top surface in 14 nanometer FinFET channel. The Mobility could find on I-V characterizing simulation process and giving the result from the TCAD software by biasing on the FinFET structure with gate voltage at 1 volt and the drain-source voltage from 0 Volt to 1 Volt to obtain the saturation drain current from I-V characteristic. The Electron mobility was lowering by increasing the temperature from 303K (30°C) to 353K (80°C). This FinFET structure gave the IDS (Sat) about 29 µA and gave mobility at VDS = 0 Volt about 575 cm2/Vs, at VDS = 1 Volt, the mobility dramatically down to 3.4 cm2/Vs.
Citation
Lecture Notes in Engineering and Computer Science, 2228, 770-773, 2017