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Effect of horizontal magnetic field on magnetoresistance
Author(s)
Date Issued
July 2, 2018
Type
Conference Paper
Abstract
The effect of horizontal magnetic field on magnetoresistance was studied by TCAD simulation. At low concentration 1014 and 1015 cm-3, the magnetoresistance linearly depends on magnetic field density and direction. The percent of magnetoresistance (%MR) of this study is less than 1 % at biased current 1 mA, 0.5 T. The unbalance between Lorentz's force FL and Hall electrical force FH causes this effect. The positive and negative % MR of magnetic field in -y and y direction are caused by FL > FH. At the high concentration 1016 - 1019 cm-3, the Lorentz's force and Hall electrical force are nearly equal. The magnetoresistance is a little bit positive both in -y and y magnetic field direction which are caused by FL > FH and FH > FL, respsctively.
Citation
Ecti Con 2018 15th International Conference on Electrical Engineering Electronics Computer Telecommunications and Information Technology, 209-212, 2018