XAFS analysis of indium oxynitride thin films grown on silicon substrates

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dc.contributor.authorK. Amnuyswat
dc.contributor.authorC. Saributr
dc.contributor.authorP. Thanomngam
dc.contributor.authorA. Sungthong
dc.contributor.authorS. Porntheeraphat
dc.contributor.authorS. Sopitpan
dc.contributor.authorJ. Nukeaw
dc.date.accessioned2025-07-21T05:53:28Z
dc.date.issued2012-12-29
dc.identifier.doi10.1002/xrs.2438
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/3774
dc.subjectIndium nitride
dc.subjectWurtzite crystal structure
dc.subjectSilicon oxynitride
dc.subject.classificationZnO doping and properties
dc.titleXAFS analysis of indium oxynitride thin films grown on silicon substrates
dc.typeArticle

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