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Diode Parameters and Equivalent Electrical Circuit Model of <i>n</i>-Type Silicon/B-Doped <i>p</i>-Type Ultrananocrystalline Diamond Heterojunctions Manufactured Through Coaxial Arc Plasma Deposition
Diode Parameters and Equivalent Electrical Circuit Model of <i>n</i>-Type Silicon/B-Doped <i>p</i>-Type Ultrananocrystalline Diamond Heterojunctions Manufactured Through Coaxial Arc Plasma Deposition
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Date
2020-03-03
Authors
Rawiwan Chaleawpong
Nathaporn Promros
Peerasil Charoenyuenyao
Phongsaphak Sittimart
Satoshi Takeichi
Y_ki Katamune
Abdelrahman Zkria
Eslam Abubakr
Mohamed Egiza
Ali Mohamed Ali
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Abstract
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Keywords
Equivalent series resistance
,
Coaxial
,
Constant phase element
Citation
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https://dspace.kmitl.ac.th/handle/123456789/9264
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