Diode Parameters and Equivalent Electrical Circuit Model of <i>n</i>-Type Silicon/B-Doped <i>p</i>-Type Ultrananocrystalline Diamond Heterojunctions Manufactured Through Coaxial Arc Plasma Deposition

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dc.contributor.authorRawiwan Chaleawpong
dc.contributor.authorNathaporn Promros
dc.contributor.authorPeerasil Charoenyuenyao
dc.contributor.authorPhongsaphak Sittimart
dc.contributor.authorSatoshi Takeichi
dc.contributor.authorY_ki Katamune
dc.contributor.authorAbdelrahman Zkria
dc.contributor.authorEslam Abubakr
dc.contributor.authorMohamed Egiza
dc.contributor.authorAli Mohamed Ali
dc.contributor.authorTsuyoshi Yoshitake
dc.date.accessioned2025-07-21T06:03:12Z
dc.date.issued2020-03-03
dc.identifier.doi10.1166/jnn.2020.17838
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/9264
dc.subjectEquivalent series resistance
dc.subjectCoaxial
dc.subjectConstant phase element
dc.subject.classificationDiamond and Carbon-based Materials Research
dc.titleDiode Parameters and Equivalent Electrical Circuit Model of <i>n</i>-Type Silicon/B-Doped <i>p</i>-Type Ultrananocrystalline Diamond Heterojunctions Manufactured Through Coaxial Arc Plasma Deposition
dc.typeArticle

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