Carrier transportation properties and series resistance of n-type _-FeSi<sub>2</sub>/p-type Si heterojunctions fabricated by RF magnetron sputtering

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dc.contributor.authorAdison Nopparuchikun
dc.contributor.authorNathaporn Promros
dc.contributor.authorSakmongkon Teakchaicum
dc.contributor.authorPeeradon Onsee
dc.contributor.authorAsanlaya Duangrawa
dc.contributor.authorPhongsaphak Sittimart
dc.date.accessioned2025-07-21T05:58:10Z
dc.date.issued2017-05-16
dc.identifier.doi10.7567/jjap.56.06he06
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/6459
dc.subjectEquivalent series resistance
dc.subjectCavity magnetron
dc.subjectBiasing
dc.subject.classificationSemiconductor materials and interfaces
dc.titleCarrier transportation properties and series resistance of n-type _-FeSi<sub>2</sub>/p-type Si heterojunctions fabricated by RF magnetron sputtering
dc.typeArticle

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