Interface State Density and Series Resistance of <i>n</i>-Type Nanocrystalline FeSi<sub>2</sub>/<i>p</i>-Type Si Heterojunctions Formed by Utilizing Facing-Target Direct-Current Sputtering

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dc.contributor.authorPhongsaphak Sittimart
dc.contributor.authorAsanlaya Duangrawa
dc.contributor.authorPeeradon Onsee
dc.contributor.authorSakmongkon Teakchaicum
dc.contributor.authorAdison Nopparuchikun
dc.contributor.authorNathaporn Promros
dc.date.accessioned2025-07-21T05:58:50Z
dc.date.issued2017-10-17
dc.identifier.doi10.1166/jnn.2018.14991
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/6806
dc.subjectNanocrystalline material
dc.subjectEquivalent series resistance
dc.subjectOhmic contact
dc.subject.classificationSemiconductor materials and interfaces
dc.titleInterface State Density and Series Resistance of <i>n</i>-Type Nanocrystalline FeSi<sub>2</sub>/<i>p</i>-Type Si Heterojunctions Formed by Utilizing Facing-Target Direct-Current Sputtering
dc.typeArticle

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