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The Effect of Gamma Irradiation on Threshold Voltage and Channel Mobility Degradation of NMOS
The Effect of Gamma Irradiation on Threshold Voltage and Channel Mobility Degradation of NMOS
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Date
2018-03-01
Authors
Amonrat Kerdpradist
Anucha Ruangphanit
Wisut Titiroongruang
Rangson Muanghlua
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Transconductance
,
Saturation (graph theory)
,
Microelectronics
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https://dspace.kmitl.ac.th/handle/123456789/7314
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