The Effect of Gamma Irradiation on Threshold Voltage and Channel Mobility Degradation of NMOS

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dc.contributor.authorAmonrat Kerdpradist
dc.contributor.authorAnucha Ruangphanit
dc.contributor.authorWisut Titiroongruang
dc.contributor.authorRangson Muanghlua
dc.date.accessioned2025-07-21T05:59:44Z
dc.date.issued2018-03-01
dc.identifier.doi10.1109/ieecon.2018.8712257
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/7314
dc.subjectTransconductance
dc.subjectSaturation (graph theory)
dc.subjectMicroelectronics
dc.subject.classificationSemiconductor materials and devices
dc.titleThe Effect of Gamma Irradiation on Threshold Voltage and Channel Mobility Degradation of NMOS
dc.typeArticle

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