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Development a novel model of threshold voltage of NMOS with temperature dependence and narrow channel width
Development a novel model of threshold voltage of NMOS with temperature dependence and narrow channel width
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Date
2016-06-01
Authors
A. Ruangphanit
A. Poyai
R. Muanghlua
S. Niemcharoen
W. Titiroongruang
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Abstract
Description
Keywords
Negative-bias temperature instability
,
Overdrive voltage
,
Reverse short-channel effect
Citation
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https://dspace.kmitl.ac.th/handle/123456789/5769
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