Development a novel model of threshold voltage of NMOS with temperature dependence and narrow channel width

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dc.contributor.authorA. Ruangphanit
dc.contributor.authorA. Poyai
dc.contributor.authorR. Muanghlua
dc.contributor.authorS. Niemcharoen
dc.contributor.authorW. Titiroongruang
dc.date.accessioned2025-07-21T05:56:58Z
dc.date.issued2016-06-01
dc.identifier.doi10.1109/ecticon.2016.7561330
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/5769
dc.subjectNegative-bias temperature instability
dc.subjectOverdrive voltage
dc.subjectReverse short-channel effect
dc.subject.classificationAdvancements in Semiconductor Devices and Circuit Design
dc.titleDevelopment a novel model of threshold voltage of NMOS with temperature dependence and narrow channel width
dc.typeArticle

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