The current gain of bipolar transistor in the IGBT measurement

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dc.contributor.authorJ. Parnklang
dc.contributor.authorS. Niemcharoen
dc.contributor.authorS. Yardsamer
dc.date.accessioned2025-07-21T05:47:13Z
dc.date.issued2002-11-07
dc.identifier.doi10.1109/tencon.2000.893708
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/281
dc.subjectInsulated-gate bipolar transistor
dc.subjectHeterostructure-emitter bipolar transistor
dc.subjectCurrent injection technique
dc.subjectBipolar transistor biasing
dc.subjectHeterojunction bipolar transistor
dc.subject.classificationSilicon Carbide Semiconductor Technologies
dc.titleThe current gain of bipolar transistor in the IGBT measurement
dc.typeArticle

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