Epitaxial growth of n-type _-FeSi₂thin films on p-type Si(111) substrates by radio-frequency magnetron sputtering and rectifying action of heterojunctions

Abstract

n-Type β-FeSi2 thin films were deposited on p-type Si(111) substrates by conventional radio frequency magnetron sputtering at substrate temperatures of 500–600 °C without post-annealing. The epitaxial growth of β-FeSi2 on Si(111) initiates at substrate temperatures of higher than 560 °C, and it was found that the epitaxial growth is indispensable for the n-type β-FeSi2/p-type Si heterojunctions having rectifying action.