Epitaxial growth of n-type _-FeSi<sub>2</sub>thin films on p-type Si(111) substrates by radio-frequency magnetron sputtering and rectifying action of heterojunctions

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dc.contributor.authorTarek M. Mostafa
dc.contributor.authorMotoki Takahara
dc.contributor.authorRyuji Baba
dc.contributor.authorSuguru Funasaki
dc.contributor.authorMahmoud Shaban
dc.contributor.authorNathaporn Promros
dc.contributor.authorAki Tominaga
dc.contributor.authorMaiko Nishibori
dc.contributor.authorTsuyoshi Yoshitake
dc.date.accessioned2025-07-21T05:55:34Z
dc.date.issued2015-01-01
dc.description.abstractn-Type β-FeSi2 thin films were deposited on p-type Si(111) substrates by conventional radio frequency magnetron sputtering at substrate temperatures of 500–600 °C without post-annealing. The epitaxial growth of β-FeSi2 on Si(111) initiates at substrate temperatures of higher than 560 °C, and it was found that the epitaxial growth is indispensable for the n-type β-FeSi2/p-type Si heterojunctions having rectifying action.
dc.identifier.doi10.7567/jjapcp.3.011102
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/4982
dc.subject.classificationSemiconductor materials and interfaces
dc.titleEpitaxial growth of n-type _-FeSi<sub>2</sub>thin films on p-type Si(111) substrates by radio-frequency magnetron sputtering and rectifying action of heterojunctions
dc.typeArticle

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