<i>C�V�f, G�V�f</i> and <i>Z_�Z_</i> Characteristics of <i>n</i>-Type Si/B-Doped <i>p</i>-Type Ultrananocrystalline Diamond Heterojunctions Formed via Pulsed Laser Deposition

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2019-04-26

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Equivalent series resistance, Pulsed Laser Deposition, Depletion region

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https://dspace.kmitl.ac.th/handle/123456789/8312

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