<i>C�V�f, G�V�f</i> and <i>Z_�Z_</i> Characteristics of <i>n</i>-Type Si/B-Doped <i>p</i>-Type Ultrananocrystalline Diamond Heterojunctions Formed via Pulsed Laser Deposition

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dc.contributor.authorRawiwan Chaleawpong
dc.contributor.authorNathaporn Promros
dc.contributor.authorPeerasil Charoenyuenyao
dc.contributor.authorAdison Nopparuchikun
dc.contributor.authorTakanori Hanada
dc.contributor.authorShinya Ohmagari
dc.contributor.authorTsuyoshi Yoshitake
dc.date.accessioned2025-07-21T06:01:32Z
dc.date.issued2019-04-26
dc.identifier.doi10.1166/jnn.2019.17124
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/8312
dc.subjectEquivalent series resistance
dc.subjectPulsed Laser Deposition
dc.subjectDepletion region
dc.subject.classificationDiamond and Carbon-based Materials Research
dc.title<i>C�V�f, G�V�f</i> and <i>Z_�Z_</i> Characteristics of <i>n</i>-Type Si/B-Doped <i>p</i>-Type Ultrananocrystalline Diamond Heterojunctions Formed via Pulsed Laser Deposition
dc.typeArticle

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