Temperature dependency of impedance, dielectric, and conductivity properties for Si-p/beta-FeSi2-n heterostructures created through facing target sputtering

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2024-5-10

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Materials Science in Semiconductor Processing

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Semiconductor materials and interfaces, Surface and Thin Film Phenomena, Semiconductor materials and devices

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https://dspace.kmitl.ac.th/handle/123456789/17756

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