Temperature dependency of impedance, dielectric, and conductivity properties for Si-p/beta-FeSi2-n heterostructures created through facing target sputtering

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dc.contributor.authorNattakorn Borwornpornmetee
dc.contributor.authorPhongsaphak Sittimart
dc.contributor.authorThawichai Traiprom
dc.contributor.authorBoonchoat Paosawatyanyong
dc.contributor.authorTsuyoshi Yoshitake
dc.contributor.authorNathaporn Promros
dc.date.accessioned2026-05-08T19:20:53Z
dc.date.issued2024-5-10
dc.identifier.doi10.1016/j.mssp.2024.108499
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/17756
dc.publisherMaterials Science in Semiconductor Processing
dc.subjectSemiconductor materials and interfaces
dc.subjectSurface and Thin Film Phenomena
dc.subjectSemiconductor materials and devices
dc.titleTemperature dependency of impedance, dielectric, and conductivity properties for Si-p/beta-FeSi2-n heterostructures created through facing target sputtering
dc.typeArticle

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