Doping effect of pt on capacitance-voltage properties of metal-semiconductor-metal device

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dc.contributor.authorSrithanachai, Itsara
dc.contributor.authorNiemcharoen, Surasak
dc.contributor.authorSangwaranatee, Narong
dc.contributor.authorAuttaphut, Prongsak
dc.date.accessioned2026-08-06T10:27:02Z
dc.date.available2026-08-06T10:27:02Z
dc.date.issued2020-01-01
dc.description.abstractThis paper present the effect on capacitance-voltage (C-V) characteristics of metal-semiconductor-metal (MSM) by Pt doping. Platinum atom dope on back side of substrate and drive in by using rapid thermal annealing (RTA) process around 5 mins, then, diffuse into silicon structure. The influence of doping atom will change structure of silicon and impact to electrical properties of device. Pt atom will induce trapping center in silicon band and will help in switching time of MSM device. The ultimate goal of this paper will focus on C-V characteristics and simulation result of Pt atom to confirm diffusion range. Moreover, we will measure resistance of silicon substrate before and after Pt-doped to confirm diffusion range.
dc.identifier.citationSuranaree Journal of Science and Technology, 27(2), 2020
dc.identifier.issn0858849X
dc.identifier.other2-s2.0-85091353575
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/10534
dc.sourceSuranaree Journal of Science and Technology
dc.subjectC-V characteristics
dc.subjectMSM
dc.subjectPlatinum diffusion
dc.subjectSwitching time
dc.titleDoping effect of pt on capacitance-voltage properties of metal-semiconductor-metal device
dc.typeArticle

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