Minority Carrier Lifetime Controlling of Mesa Diodes by Electron Beam Irradiation

Simple item page
dc.contributor.authorWiwa Titthikusumarn
dc.contributor.authorWittaya Jakpetch
dc.contributor.authorWisut Titiroongruang
dc.date.accessioned2025-07-21T05:54:10Z
dc.date.issued2013-09-01
dc.identifier.doi10.4028/www.scientific.net/amr.811.200
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/4166
dc.subjectSaturation current
dc.subjectReverse leakage current
dc.subjectLeakage (economics)
dc.subjectElectron beam processing
dc.subjectSaturation (graph theory)
dc.subjectCarrier lifetime
dc.subjectMesa
dc.subject.classificationSilicon Carbide Semiconductor Technologies
dc.titleMinority Carrier Lifetime Controlling of Mesa Diodes by Electron Beam Irradiation
dc.typeArticle

Files

Collections

All