Skip to main content
Communities & Collections
All of DSpace
Statistics
English
العربية
বাংলা
Català
Čeština
Deutsch
Ελληνικά
Español
Suomi
Français
Gàidhlig
हिंदी
Magyar
Italiano
Қазақ
Latviešu
Nederlands
Polski
Português
Português do Brasil
Srpski (lat)
Српски
Svenska
Türkçe
Yкраї́нська
Tiếng Việt
Log In
Log in
New user? Click here to register.
Have you forgotten your password?
Home
KMITL
All
Defects Study by Activation Energy Profile for Lowering Leakage Current in P-N Junction
Defects Study by Activation Energy Profile for Lowering Leakage Current in P-N Junction
Loading...
Date
2011-07-01
Authors
Itsara Srithanachai
Surada Ueamanapong
Poopol Rujanapich
Narin Atiwongsangthong
Surasak Niemcharoen
Amporn Poyai
Wisut Titiroongruang
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
Description
Keywords
Arrhenius plot
,
Depletion region
,
Diffusion capacitance
,
Leakage (economics)
,
p�n junction
Citation
URI
https://dspace.kmitl.ac.th/handle/123456789/3041
Collections
All
Endorsement
Review
Supplemented By
Referenced By
Full item page