Defects Study by Activation Energy Profile for Lowering Leakage Current in P-N Junction

Simple item page
dc.contributor.authorItsara Srithanachai
dc.contributor.authorSurada Ueamanapong
dc.contributor.authorPoopol Rujanapich
dc.contributor.authorNarin Atiwongsangthong
dc.contributor.authorSurasak Niemcharoen
dc.contributor.authorAmporn Poyai
dc.contributor.authorWisut Titiroongruang
dc.date.accessioned2025-07-21T05:52:12Z
dc.date.issued2011-07-01
dc.identifier.doi10.4028/www.scientific.net/msf.695.569
dc.identifier.urihttps://dspace.kmitl.ac.th/handle/123456789/3041
dc.subjectArrhenius plot
dc.subjectDepletion region
dc.subjectDiffusion capacitance
dc.subjectLeakage (economics)
dc.subjectp�n junction
dc.subject.classificationSilicon and Solar Cell Technologies
dc.titleDefects Study by Activation Energy Profile for Lowering Leakage Current in P-N Junction
dc.typeArticle

Files

Collections

All