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Effect and Determination of Oxide Trapped Charge and Interface Trapped Charge Density of Threshold Voltage Shift in Irradiated MOSFET by Subthreshold Methodology
(2023-10-01)
Ruangphanit, Anucha
;
Muanghlua, Rangson
;
Wongprasert, Yothin
This paper presents the effects and determination of oxide and interface trapped charge density of threshold voltage shift in irradiated MOSFET by subthreshold methodology. The designed dimension, channel width per channel length (W/L) is 20 µm/20 µm. The threshold voltage is extracted by a linear extrapolation methodology. The over all threshold voltage shifts are caused by oxide trapped charge and interface trapped charge. The subthreshold methodology determines the interface trapped charge. The60Co gamma-ray source was used for irradiation to a total dose of 10 kGy. The results showed that the threshold voltage shift is approximately-24 mV/kGy for NMOS and-27 mV/kGy for PMOS. The subthreshold swing shift is approximately 1.2 mV/dec.kGy for NMOS and 0.9 mV/dec.kGy for PMOS. The oxide trapped charge density N<inf>OT</inf> and interface trapped charge density N<inf>IT</inf> are found to be increased in NMOS and PMOS respectively. The ratio of ΔN<inf>OT</inf>/ΔN<inf>IT</inf> was approximately 2.2 times for NMOS and 2.8 times. Due to the structure, the channel of NMOS is a surface channel whereas the channel of PMOS is a buried channel. Finally, the effect of gamma irradiation on the PMOS was greater than the effect on NMOS observed from the change in threshold voltage and the ratio of ΔN<inf>OT</inf>/ΔN<inf>IT.</inf>.
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Investigation of Oxide and Interface Trapped Charge on Threshold Voltage Shift in Gamma Irradiated NMOSFET by Subthreshold Method
(2021-04-01)
Ruangphanit, Anucha
;
Muanghlua, Rangson
In this paper, the oxide trapped charge density (NOT) and interface trapped charge density (NIT) on the threshold voltage shift with the total dose under gamma irradiation of NMOSFET are investigated. The subthreshold technique (mV/dec) is used to separate the irradiation induced threshold voltage shifts into voltage shifts due to the interface trapped charge. The linear extrapolation method is used to extract the threshold voltage from I{DS}-V{GS} curve at low VDS of typically 100 mV. The results showed that the threshold voltage was shifted from 0.69 V to 0.45 V, the threshold swing was increased from 95 to 107 mV/dec, the oxide charge and interface charge density were found to be increase almost by 1 order in magnitude for a total gamma dose of 10 kGy.
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Extraction Methodology and Junction Capacitance Model of PMOSFET in VLSI
(2020-03-01)
Nissai, Itsariya
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Ruangphanit, Anucha
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Vittayakorn, Naratip
;
Muanghlua, Rangson
The paper presents the extraction methodology and junction capacitance model of PMOSFET in VLSI. The p-n junction layouts with low perimeter and high perimeter have been designed. The LOCal Oxidation of Silicon (LOCOS) affect was used for the device area and perimeter be precisely determined. The C-V characteristics of P+/NWell junction, PLDD/NWell junction and Psub/NWell junction are measured. The model can be calculated by simple program which gives the error between the results of the measurement and the results of the simulation is in the range of less than 5%
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The effects of geometrical capacitance components of LOCOS diode in VLSI
(2019-03-01)
Nissai, Itsariya
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Ruangphanit, Anucha
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Wongprasert, Yothin
;
Muanghlua, Rangson
The effects of geometrical capacitance components of LOCal Oxidation of Silicon (LOCOS) diode in Very Large Scale Integrated circuit (VLSI) are proposed. For the correct circuit model simulation, the model of the device must be accurate and consistence with the SPICE models. The rectangular structure (L=400 μm, W=200 μm), the multi-fringe structure 1 (L=400 μm, W=4 μm, no. strips =50) and the multi-fringe structure 2 (L= S μm, W= Sμm, no. sample =1200) have been designed. These extraction methodologies show the area capacitance component, the peripheral capacitance component and the corner capacitance component at the field oxide side. The BSIM 3v3 junction capacitance models are proposed also. The comparison is made to check the accuracy of the parameter models. The results showed a low level error.
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The effects of gamma irradiation on threshold voltage and channel mobility models of PMOS
(2018-07-02)
Kerdpradist, Amonrat
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Titiroongruang, Wisut
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Atiwongsangthong, Narin
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Muanghlua, Rangson
;
Ruangphanit, Anucha
This paper presents the effects of gamma irradiation on threshold voltage and mobility models of PMOS. The devices with a gate oxide thickness of 15 nm fabricated in an 0.8-micron CMOS technology were measured and tested. The electrical properties were collected pre-irradiation and after the exposure by a60Co gamma-ray source in the dose range of 1 to 10 kGy, transient dose = 290.68 Gy/hr. The results show that the threshold voltage of big MOS at zero substrate bias (VT0) increased approximately 28%, but the low field surface mobility (UO) and the maximum transconductance parameter (K0) decreased in the same value by 7.5% and the THETA (? ) parameter decreased by 28%. All parameters caused the saturation drain current of big MOS to decrease 16%. For short channel effects, the saturation drain current decreased more. Finally, the short channel model parameter should be investigated and discussed in future.
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Measured and Extraction of Coupling Capacitive of Metal Interconnect Layers in VLSI
(2018-07-02)
Ruangphanit, Anucha
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Nissai, Itsariya
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Pedlub, Rujipad
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Muanghlua, Rangson
This paper presents the measurement and extraction of the capacitance for multilayer interconnections in VLSI. The capacitance of the capacitive coupling between interconnect is measured as a function of the varying frequency in order to develop a capacitance versus frequency curve. The multi-fringe structure of interconnect metal1 layer and interconnect metal2 layer \pmb{(\text{L}=400\mu \text{m}, \ \text{no}. \ \text{strip} =80)} with the total perimeter of capacitive coupling is approximately \pmb{3.16\times 10 {4}} \pmb{\mu} \mathbf{m} of value and the area is \pmb{2.8\times 10 {4}} \ \pmb{\mu\text{m} {2}} of value are tested respectively. The line width and line spacing ratio (W/S) of interconnect is varying from 0.9/0.6, 0.9/0.9, 0.9/1.05 and 0.9/1.2 with the measured frequency of 10kHz, 100kHz, 250kHz, 500kHz, IMHZ and 5 MHz are measured. The coupling of interconnect per unit length at various line spacing as a function of measured frequency of metal1 and metal2 are reported and discussed. The results show that the coupling capacitance per unit length \pmb{(\text{F}/\mu \text{m})} increases as the spacing between adjacent interconnect lines is deceased.
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Horizontal Magnetic Field MAGFET by Conventional MOSFET Structure
(2018-07-02)
Nakachai, Rattapong
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Poonsawat, Sawatdipong
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Sutthinet, Chalin
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Ruangphanit, Anucha
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Poyai, Amporn
The MOSFET used as magnetic field sensor is presented. It is a conventional structure that has a source, a gate, a drain and a substrate or body terminal which fabricated by standard CMOS process. It detects the horizontal y-direction magnetic field in parallel and perpendicular to currents. The device is biased for channel current and substrate current. The mechanism is Hall Effect in current mode. The induced Lorentz's force deflects currents between drain current and substrate forward current causes output differential current. The relation shows linearly dependence between magnetic field density and output differential current. The relative sensitivity depends on amount of bias currents.
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The Effect of Gamma Irradiation on Threshold Voltage and Channel Mobility Degradation of NMOS
(2018-07-02)
Kerdpradist, Amonrat
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Ruangphanit, Anucha
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Titiroongruang, Wisut
;
Muanghlua, Rangson
This paper presents the effect of Gamma Irradiated on threshold voltage, surface mobility and transconductance on N-channel MOSFET devices at a gate oxide thickness of 15 nanometers, which is fabricated at Thai Microelectronics Center by 0.8-micron CMOS technology. Then gamma irradiation (Co-60) at a total dose varied from 1 to 10 \mathbf{kGy}. By performing five rounds to observe changes in threshold voltage when the devices were exposed to gamma rays for measurement to extraction threshold Voltage (V<inf>TH</inf>) into the surface mobility (Uo) from I<inf>DS</inf>Vs V<inf>Gs</inf> curves in the saturation region. As a result, the threshold Voltage reduces at highest dose by approximately 38% compared with conventional N-channel MOSFET, for a parameter extraction in the level 3 model for MOSFET SPICE parameters is presented.
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Effects of Temperature and Channel Doping on the BSIM3 Threshold Voltage Model of NMOSFET form Substrate Bias Dependent Methodology
(2016-01-01)
Muanghlua, Rangson
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Niemcharoen, Surasak
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Poyai, Amporn
;
Ruangphanit, Anucha
The effects of channel doping and temperature dependence on the BSIM3 threshold voltage model of NMOSFET form substrate bias dependent methodology is proposed. The I<inf>DS</inf> -V<inf>GS</inf> in linear region with different substrate bias condition of a big size of NMOSFET was used. The threshold voltage parameters extraction procedure is based on the measurement of the transconductance characteristics of MOSFET in linear region. The electrical parameters γ, N<inf>CH</inf> and N<inf>SUB</inf> also the BSIM3 model parameter K<inf>1</inf> and K<inf>2</inf> at different channel implanted dose and different operating temperature are extracted. The model can be implemented in simulation tools with the error is less than 5%.
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A comparison of cation distribution and valence state in spinel crystal structure of zinc and nickel ferrites using the synchrotron X-ray absorption spectroscopy (XAS) analysis
(2014-07-24)
Tangcharoen, Thanit
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Klysubun, Wantana
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Ruangphanit, Anucha
;
Pecharapa, Wisanu
In this work, the physical structure, magnetism and local structure of zinc and nickel ferrites (ZnFe<inf>2</inf>O<inf>4</inf> and NiFe<inf>2</inf>O <inf>4</inf>) synthesized by typical sol-gel combustion method, were investigated by X-ray diffraction (XRD), vibrating sample magnetometer (VSM), X-ray absorption near-edge structure (XANES) and extended X-ray absorption fine structure (EXAFS). The formation of the single phase cubic spinel crystal structure and the different values of crystallite size (D), interplanar distance (d) and lattice constant (a) for all ferrite samples were evaluated by the XRD data. The VSM measurement provides the characteristic magnetic hysteresis loop (M-H) for each sample which was found to be significantly different from each other. The chemical shifts in Zn, Ni and Fe K-edges XANES spectra indicate the existence of Zn2+, Ni2+ and Fe3+ ions in these ferrites. The EXAFS spectra analyses applied to track Zn, Ni and Fe cation distribution indicate the distinct character of spinel crystal structure of both ferrites. The results exhibit that zinc ferrite is a normal spinel, while the nickel ferrite is an inverse spinel. Moreover, these EXAFS spectra analyses reveal that the distances between metal ion (Zn2+ or Ni2+) to central oxygen ion and to Fe3+ ions in the opposite lattice site for each ferrite sample are unequal which highly affect its magnetism. The overall simulated results are one of the important evidence encouraging the explanation on the paramagnetism for ZnFe<inf>2</inf>O<inf>4</inf> and the ferrimagnetism for NiFe<inf>2</inf>O<inf>4</inf>. © 2014 Taylor & Francis Group, LLC.

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