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X-ray soft annealing process study for p-n junction diode
(2013-08-01)
Rujanapich, Poopol
;
Poyai, Amporn
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Srithanachai, Itsara
;
Ueamanapong, Surada
;
Titiroongruang, Wisut
The effect of X-ray soft annealing on the electrical properties of p-n junction diodes has been investigated. Under a forward bias of 1.0 V at 303 K, the forward current is approximately two orders of magnitude higher for X-ray annealed than for non-X-ray annealed samples. This effect is further investigated by evaluating the following properties under forward-bias conditions: ideality factor, saturation current, activation energy, series resistance, under reverse-bias conditions, carrier-generation lifetime, and activation energy. Results suggest that X-ray soft annealing improves the electrical properties of p-n junction diodes under forward-bias conditions.
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An improvement of forward current of P-N diode using soft X-ray method
(2013-02-01)
Rujanapich, Poopol
;
Srithanachai, Itsara
;
Ueamanapong, Surada
;
Poya, Amporn
;
Niemcharoen, Surasak
We present the experimental investigation of platinum doped P-N junction diodes that they were fabricated by using a CMOS technology. The effect of soft X-ray annealing technique on the device is investigated and the device performance improvement observed. The current-voltage (I-V) characteristics of the diodes were measured at room temperature. The forward current before and after irradiation can be explained relatively to the carrier recombination lifetime (τ<inf>r</inf>). After irradiation, at 55 and 70 keV for 55 and 205 seconds, the small change in leakage current is noted. However, the forward current is increased by several orders of magnitude. The carrier recombination lifetime was the main effects of the change in forward current. The recombination lifetimes after irradiation are decreased from 0.55μ??s to 0.45μs and 0.55μs to 0.48μs, which show that the device performances are sed after X-ray irradiation. Soft X-ray annealing is a new technique for improve the device performance. © 2013 American Scientific Publishers All rights reserved.
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Effect of X-ray irradiation on the current of P-N diode
(2011-01-01)
Srithanachai, Itsara
;
Ueamanapong, Surada
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Rujanapich, Poopol
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Poyai, Amporn
;
Niemcharoen, Surasak
An effect induced by x-ray irradiation on Boron-doped crystalline Si at room temperature was closely investigated in this paper. Irradiation of X-ray energy of 40, 55 and 70keV has been performed on P-N junction diodes fabricated at Thai Microelectronics Center. Minority carrier life time of the device has been calculated before and after irradiation for comparison. The results show no significant change on the value between exposed and unexposed device. Therefore, any permanent lattice modified or any defects caused by X-ray in the device bulk seem to be unconfirmed in this range of energy. However, from this study, X-ray irradiation still effects on electrical characteristics of the diodes. Current-voltage (I-V) measurement has been carried out to study characteristic variation of the device. Biasing of the device was performed from -10 to 1 V and, after the exposure, the leakage current was obviously decreased by 25% and forward current was dramatically increased by 3 order of magnitude related to increment of X-ray energy. © (2011) Trans Tech Publications.
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Defects study by activation energy profile for lowering leakage current in p-n junction
(2011-01-01)
Srithanachai, Itsara
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Ueamanapong, Surada
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Rujanapich, Poopol
;
Atiwongsangthong, Narin
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Niemcharoen, Surasak
Diode leakage current consists of diffusion (I<inf>d</inf>) and generation current (I<inf>g</inf>), which is strongly sensitive to the residual defect density. These defects can be studied by activation energy (E<inf>a</inf>). Therefore, this paper presents a method for calculating activation energy of silicon p-n junctions from volume generation current. It combines temperature-dependent current-voltage (I -V) and capacitance- voltage (C-V) measurements of diodes. The I<inf>g</inf> can be found from the volume leakage current by subtraction of the volume diffusion current, which is calculated while the depletion width is zero. The activation energy (E<inf>a</inf>) is derived from slope of an Arrhenius plot of I<inf>g</inf>. To derive the correct slope the temperature dependence of the depletion width, which is obtained from the corrected volume capacitance has been applied. The E<inf>a</inf> profile below junction has been shown. The lower E<inf>a</inf> value has been found near the junction, which may relate to the junction implantation. © (2011) Trans Tech Publications.
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Generation lifetime analysis of p-n junction x-ray detector
(2010-07-30)
Rujanapich, Poopol
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Poyai, Amporn
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Srithanachai, Itsara
;
Pengpad, Putapon
;
Hruanan, Charndet
Operation lifetime of the X-ray detector is the major factor that defines cost of detector or the actual operation cost of the detector. The purpose of this paper is to study the possibility of operation lifetime extension of the silicon x-ray detector. The study of the device's carrier generation lifetime before and after device exposed to the X-ray for 4 and 150 second at 40, 55 as well as 70 keV were conducted in this paper. The 1 mm<sup>2</sup> p-n junctions were fabricated by boron implantation process into phosphorus doped silicon wafer. A commercial x-ray source for dentist was used to generate x-ray in these experiments. The carrier generation lifetime was calculated from current-voltage (I-V) and capacitance-voltage (C-V) characteristics. The results show that the carrier generation lifetime increased after 4 second of x-ray irradiation at all three energy conditions but decreased back close to the original value after continue exposed devices for another 150 second. However, the lowest point of the generation lifetime after 4 second of x-ray irradiation is depending on the level of energy used. The results also presented that the defects that caused by x-ray irradiation are manageable.

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