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    Photovoltaic, capacitance-voltage, conductance-voltage, and electrical impedance characteristics of p-type silicon/intrinsic-silicon/n-type semiconducting iron disilicide heterostructures built via facing target direct-current sputtering
    (2020-09-01)
    Chaleawpong, Rawiwan
    ;
    Promros, Nathaporn
    ;
    Charoenyuenyao, Peerasil
    ;
    Borwornpornmetee, Nattakorn
    ;
    Sittisart, Pattarapol
    p-Type silicon (Si)/intrinsic Si/n-type semiconducting iron disilicide heterostructures were built via facing target direct-current sputtering. To assess the photovoltaic properties, the current density-voltage characteristic curves were recorded in conditions of dark and under irradiation via an Air Mass 1.5 solar simulator (100 mW/cm<sup>2</sup>). The built heterostructures demonstrated effective rectifying behavior along with a rather substantial leakage current. The open-circuit voltage and the short-circuit photocurrent density values were 178.00 mV and 10.08 mA/cm<sup>2</sup>, respectively. The assessed energy conversion efficiency was approximately 0.75%. The series resistance (R<inf>s</inf>) values at 0 V appraised by the Nicollian-Goetzberger technique were 60.28 Ω at 2 MHz, and 4.13 × 10<sup>3</sup> Ω at 10 kHz. Their interface state density values evaluated through the Hill-Coleman method were 1.38 × 10<sup>12</sup> cm<sup>−2</sup>/eV at 10 kHz and 1.31 × 10<sup>11</sup> cm<sup>−2</sup>/eV at 2 MHz. The R<inf>s</inf> and interface states occurring in the heterostructure interface zone should be the potential determinant of the degeneration of the photovoltaic properties. The characteristics of the real (Z’) and imaginary components of impedance under the changing voltages manifested a shape of one semicircle having a semicircular midpoint beneath the Z’ coordinate. An equivalent circuit model that was related with the heterostructure behavior should be assembled from the parallel association of resistance and constant phase element connected with R<inf>s</inf>.
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    Electroreflectance and photocurrent measurement of ZnSe/Alq 3/TPD heterostructure on Si-substrate
    (2005-11-20)
    Pecharapa, W.
    ;
    Keawprajak, A.
    ;
    Kayunkid, N.
    ;
    Rahong, S.
    ;
    Yindeesuk, W.
    The optical transition energy in ZnSe/tris(8-hydroxyquinoline) aluminum (Alq<inf>3</inf>)/N,N′-bis(3-methylphenyl)-N,N′-diphenyl-benzidine (TPD) heterostructure were investigated by room-temperature electroreflectance (ER) and photocurrent (PC) measurements. PC signal showed wavelength response of the device in the range of 450-1100 nm. ER features due to optical transition energy of the single quantum well of this structure were observed. The transition energies were determined by fitting the ER spectra to the theoretical line-shape expression. The subband transition energy decreased with increasing well thickness. Under applied voltage, both ER signals show significant shift due to the quantum confined Stark effect. © 2005 Elsevier B.V. All rights reserved.
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