KMITL

Permanent URI for this communityhttps://dspace.kmitl.ac.th/handle/123456789/1

Browse

Settings

Access type: UnknownSubject: search.filters.subject.Schottky Junction

Search Results

Now showing 1 - 1 of 1
  • Loading...
    Thumbnail Image
    Some of the metrics are blocked by your 
    consent settings
    Item type:Publication,
    The mechanism of dual schottky magnetodiode
    (2012-10-02)
    Phetchakul, T.
    ;
    Luanatikomkul, W.
    ;
    Yamwong, W.
    ;
    Poyai, A.
    This paper presents the mechanism of dual schottky magnetodiode. The device can operate both in forward and reverse biasing for magnetic field sensor. Two modes of operation show linearity which electron is only type of carrier. In forward bias, the deflected electrons in n-type semiconductor cathode are injected to metal anode. In reverse bias, the electrons from metal anode are injected and continuously deflected in n-type semiconductor cathode. Comparison of two modes at the same current shows the same sensitivity. © 2012 IEEE.