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Author: search.filters.author.Hruanun, CharndetSubject: search.filters.subject.Hall Effect

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    The effect injection width and temperature-offset compensation of magnetotransistor
    (2011-12-01)
    Leepattarapongpan, Chana
    ;
    Phetchakul, Toempong
    ;
    Penpondee, Naritchaphan
    ;
    Pengpad, Puttapon
    ;
    Srihapat, Arckom
    This paper presents effect of injection witdh on Magnetotransistor. Emitter area was confined by LOCOS and the injection window size was varied from 4, 5 to 10 microns. With bias current of 3 mA the window size 4 micron gives best sensitivity at 10mV/T. Measument linearity is 0.1 % full scale. voltage gain of 10 was used for minimizing temperature coefficient to be around 7.9 mV/°C measured from 25 to 125 °C. Temperature coefficient divided by sensitivity give us a relative temperature sensitivity of 7.9 % T/°C. Second magnetic sensor device has been used for temperature compensation. The second device was config as magnetic field immune then it was used as a temperature offset voltage reference. The added module reduces overall temperature sensitivy down to 0.3 % T/°C. © 2011 Published by Elsevier Ltd.