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Author: search.filters.author.Keawprajak, A.Subject: search.filters.subject.Electroreflectance

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    Electroreflectance and photocurrent measurement of ZnSe/Alq 3/TPD heterostructure on Si-substrate
    (2005-11-20)
    Pecharapa, W.
    ;
    Keawprajak, A.
    ;
    Kayunkid, N.
    ;
    Rahong, S.
    ;
    Yindeesuk, W.
    The optical transition energy in ZnSe/tris(8-hydroxyquinoline) aluminum (Alq<inf>3</inf>)/N,N′-bis(3-methylphenyl)-N,N′-diphenyl-benzidine (TPD) heterostructure were investigated by room-temperature electroreflectance (ER) and photocurrent (PC) measurements. PC signal showed wavelength response of the device in the range of 450-1100 nm. ER features due to optical transition energy of the single quantum well of this structure were observed. The transition energies were determined by fitting the ER spectra to the theoretical line-shape expression. The subband transition energy decreased with increasing well thickness. Under applied voltage, both ER signals show significant shift due to the quantum confined Stark effect. © 2005 Elsevier B.V. All rights reserved.