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Author: search.filters.author.Luanatikomkul, WittayaSubject: search.filters.subject.Sentaurus TCAD

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    Item type:Publication,
    The Design of Metal-Semiconductor-Metal Structure Magnetic Sensor
    (2016-01-01)
    Sutthinet, Chalin
    ;
    Phetchakul, Toempong
    ;
    Luanatikomkul, Wittaya
    ;
    Poyai, Amporn
    This paper presents the MSM structure magnetic detector device that normally detects the electromagnetic wave. The device is special design for magnetic field detector and still detects the electromagnetic wave as normal function. The schottky diode with the split contacts structure allows us to reach this target. The device operates with the saturation current and the magnetic response is the current difference between two contacts which is injected from one metal and deflected in semiconductor toward to another metal. From the simulation result by Sentaurus TCAD, the relative sensitivity is 14.19 mT<sup>-1</sup> at the current 0.3 μA. This device is the first MSM multi-sensor for magnetic and electromagnetic wave detector.
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    The study of p-n and schottky junction for magnetodiode
    (2012-01-01)
    Phetchakul, Toempong
    ;
    Luanatikomkul, Wittaya
    ;
    Leepattarapongpan, Chana
    ;
    Chaowicharat, Ekalak
    ;
    Pengpad, Putapon
    This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.