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Author: search.filters.author.Nakachai, RattapongSubject: search.filters.subject.Lorentz's force

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    Magnetic finfet (MAGFinFET)
    (2019-07-01)
    Pamonchom, Chanvit
    ;
    Nakachai, Rattapong
    ;
    Sutthinet, Chalin
    ;
    Poyai, Amporn
    ;
    Phetchakul, Toempong
    This paper presents magnetic sensor that uses FinFET structure. It is n channel FinFET with two separate contacts on the fin sides of drain that detects the vertical magnetic field. The gate length, fin height and fin width are 15, 15 and 5 nm, respectively. The device operates by Lorentz's force induced by magnetic field crossed perpendicular with drain current. It acts upon drain current and creates the drain differential current. The linearly dependence shows the sensitivity 181.6 nA/T, at current 1 mA. MAGFinFET is a low power and low voltage magnetic field sensor.
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    Horizontal Magnetic Field MAGFET by Conventional MOSFET Structure
    (2018-07-02)
    Nakachai, Rattapong
    ;
    Poonsawat, Sawatdipong
    ;
    Sutthinet, Chalin
    ;
    Ruangphanit, Anucha
    ;
    Poyai, Amporn
    The MOSFET used as magnetic field sensor is presented. It is a conventional structure that has a source, a gate, a drain and a substrate or body terminal which fabricated by standard CMOS process. It detects the horizontal y-direction magnetic field in parallel and perpendicular to currents. The device is biased for channel current and substrate current. The mechanism is Hall Effect in current mode. The induced Lorentz's force deflects currents between drain current and substrate forward current causes output differential current. The relation shows linearly dependence between magnetic field density and output differential current. The relative sensitivity depends on amount of bias currents.