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Author: search.filters.author.Nararug, Budsara

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    Light-response characteristics of platinum doped silicon photodetector
    (2013-11-04)
    Nararug, Budsara
    ;
    Ueamanapong, Surada
    ;
    Srithanachai, Itsara
    ;
    Janprapha, Supakorn
    ;
    Suwanchatree, Ai Lada
    The purposeof this research article is present electrical characteristic of Pt-doped silicon photodetector compare with undoped silicon photodetector. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Pt-doped detector were investigated. In this experiment, the results of Pt-doped detector show that the dark currentisobviously decreased and the photocurrent is decreased about 9 to 10 orders. Furthermore, the capacitance characteristic isslightly increased about 0.15 pF. The effects platinum on silicon indicated the carrier in silicon have been changed. © (2013) Trans Tech Publications, Switzerland.
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    Study on schottky diode characteristics improving by X-ray irradiation
    (2013-08-30)
    Klinsanit, Sani
    ;
    Srithanachai, Itsara
    ;
    Ueamanapong, Surada
    ;
    Khunkhao, Sunya
    ;
    Nararug, Budsara
    The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode. © (2013) Trans Tech Publications Switzerland.
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    Carrier lifetime of platinum doped P-N diode after irradiation by soft X-ray
    (2013-08-30)
    Nararug, Budsara
    ;
    Srithanachai, Itsara
    ;
    Ueamanapong, Surada
    ;
    Khunkhao, Sanya
    ;
    Janprapha, Supakorn
    This paper analyzes the effect of X-ray irradiation on the electrical properties of Pt-doped p-n diode. X-ray energy irradiated on Pt-doped P-N diode with 70 keV with time 205 sec. After irradiations, the current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics and carrier degeneration lifetime (τ<inf>g</inf>) were investigated. The results show that the leakage current is slightly increased after the diodes were exposed X-ray and affect higher degeneration carrier lifetime. The effects after X-ray irradiation indicated that the defects of the diode have been changed. © (2013) Trans Tech Publications Switzerland.