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Author: search.filters.author.Onlaor, K.Subject: search.filters.subject.ZnO

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    Structural, Optical, and Electrical Properties of Sputtered ZnO Thin Films and Their Application in Transparent Memory Devices
    (2022-12-01)
    Tunhoo, B.
    ;
    Kaewkusonwiwat, S.
    ;
    Thiwawong, T.
    ;
    Onlaor, K.
    We report on the fabrication of ZnO thin films using a lab-made DC sputtering process. The ZnO films were prepared at several applied sputter voltages at fixed deposition times. The properties of the deposited films were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, field-emission scanning electron microscopy, and UV–visible spectroscopy. The ZnO thin films exhibited a polycrystalline phase in the dominant (100) plane, with film thicknesses in the order of approximately 50–80 nm. In addition, a transparent memory device based on the ZnO film was successfully fabricated with a device structure of ITO/ZnO/EVA/ITO. The fabricated device exhibited high optical transparency of approximately 70% in the visible light region. The fabricated memory device demonstrated memory properties with a maximum ON/OFF current ratio of 4.66 × 10<sup>3</sup> and showed good retention properties.
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    Electrical switching and conduction mechanisms of nonvolatile write-once-read-many-times memory devices with ZnO nanoparticles embedded in polyvinylpyrrolidone
    (2014-01-01)
    Onlaor, K.
    ;
    Thiwawong, T.
    ;
    Tunhoo, B.
    We reported on the influence of zinc oxide nanoparticles (ZnO NPs) on the electrical bistable behavior of nonvolatile write-once-read-many-times (WORM) memory devices based on an indium-tin oxide/polyvinylpyrrolidone (PVP):ZnO NPs/aluminum (ITO/PVP:ZnO/Al) structure. The maximum ON/OFF current ratio of the nonvolatile WORM memory devices was approximately 3 × 10<sup>3</sup> and the devices remained in the ON state even after the applied voltage was turned off. In addition, reliability studies for response time and once write/continuous read operations of the optimal ZnO NPs concentration are presented. The response times of both rise-time and fall-time were about 3 and 6 μs respectively. The conduction mechanisms of all voltage regions of the device were analyzed by theoretical models and electron trapping in the ZnO NPs of the electron tunneling among a PVP matrix was discussed. © 2014 Elsevier B.V. All rights reserved.