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Author: search.filters.author.Poonsawat, SawatdipongSubject: search.filters.subject.MOSFET

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    Horizontal Magnetic Field MAGFET by Conventional MOSFET Structure
    (2018-07-02)
    Nakachai, Rattapong
    ;
    Poonsawat, Sawatdipong
    ;
    Sutthinet, Chalin
    ;
    Ruangphanit, Anucha
    ;
    Poyai, Amporn
    The MOSFET used as magnetic field sensor is presented. It is a conventional structure that has a source, a gate, a drain and a substrate or body terminal which fabricated by standard CMOS process. It detects the horizontal y-direction magnetic field in parallel and perpendicular to currents. The device is biased for channel current and substrate current. The mechanism is Hall Effect in current mode. The induced Lorentz's force deflects currents between drain current and substrate forward current causes output differential current. The relation shows linearly dependence between magnetic field density and output differential current. The relative sensitivity depends on amount of bias currents.
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    Simulation of MOSFET as horizontal magnetic MOSFET (MAGFET)
    (2017-12-14)
    Nakachai, Rattapong
    ;
    Phetchakul, Toempong
    ;
    Poonsawat, Sawatdipong
    ;
    Poyai, Amporn
    This work proposes the regular long channel MOSFET structure used as magnetic MOSFET (MOSFET that can detect magnetic field) in parallel direction (y-axis). The structure is regular MOSFET that has drain, gate, source and substrate (body). The mechanism of device is Hall effect in current mode between channel MOSFET current and substrate current in x-axis direction. The dimensions of channel MOSFET are 20 μm wide and 20 μm long. The channel and substrate currents are balance adjusted in the same values at 0.5, 1 and 1.5 mA. From the simulation results by TCAD sentaurus, the relative sensitivity of device is 0.01 T<sup>-1</sup> in y and - y direction, respectively. It can be used as magnetic sensor for one dimension in parallel field.