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Author: search.filters.author.Poonsawat, SawatdipongSubject: search.filters.subject.TCAD

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    Simulation of MOSFET as horizontal magnetic MOSFET (MAGFET)
    (2017-12-14)
    Nakachai, Rattapong
    ;
    Phetchakul, Toempong
    ;
    Poonsawat, Sawatdipong
    ;
    Poyai, Amporn
    This work proposes the regular long channel MOSFET structure used as magnetic MOSFET (MOSFET that can detect magnetic field) in parallel direction (y-axis). The structure is regular MOSFET that has drain, gate, source and substrate (body). The mechanism of device is Hall effect in current mode between channel MOSFET current and substrate current in x-axis direction. The dimensions of channel MOSFET are 20 μm wide and 20 μm long. The channel and substrate currents are balance adjusted in the same values at 0.5, 1 and 1.5 mA. From the simulation results by TCAD sentaurus, the relative sensitivity of device is 0.01 T<sup>-1</sup> in y and - y direction, respectively. It can be used as magnetic sensor for one dimension in parallel field.
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    Effect of substrate depth to 5-contact vertical hall
    (2017-11-03)
    Poonsawat, Sawatdipong
    ;
    Phetchakul, Toempong
    ;
    Poyai, Amporn
    We studied the flve-contact vertical Hall device using TCAD at various depth of substrate. Two main mechanisms of Hall voltage are induced voltage from Lorentz's force and differential current. At low depth, the percentage of voltage from Lorentz's force is much greater than the voltage from differential current. The depth does not only affect Hall voltage by Lorentz's force but also affect contact differential current. The Hall voltage and sensitivity of device are increased with substrate depth until the critical value. The sensitivity of device is saturation when the substrate depth is more than 70 μm. The output voltage from differential current is 45% of overall output voltage at saturation condition.