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Study of Sensitivity and Noise on Magnetic FinFET (MAG-FinFET)
(2023-01-01)
Swe, Khine Thandar Nyunt
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Poyai, Amporn
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Phetchakul, Toempong
Three dimensional FinFET device structure is proposed as magnetic device to detect the vertical magnetic field. The region of drain contact is split into two drain contacts and the MAG-FinFET has source contact, gate contact and two drain contacts. Lorentz's force appears as Hall effect when the magnetic field is exposed to the device perpendicularly. The imbalanced drain currents at the drain contact D1 and D2 caused by the expose of magnetic field are measured, and the Hall current is obtained as the output of MAG-FinFET. The relative sensitivities of MAG-FinFET with three channel lengths are calculated. Mixed mode AC analysis simulations are done by using Sentaurus TCAD to study the impact of noise on MAG-FinFET. The fluctuations at the output nodes of Mag-FinFET can be seen as noise voltage spectral density and noise current spectral density. The short channel length of 10 nm MAG-FinFET gives the highest differential drain current and shows the best sensitivity. The limitation of minimum magnetic field is determined from the noise current spectral density obtained at bandwidth 1 Hz to 1 kHz. For channel length 10 nm MAG-FinFET, the minimum magnetic field Bmin 76mTHz is obtained for narrow bandwidth at frequency 1 kHz. The equivalnet magnetic field Beq obtained for large frequency range is 1.28THz.
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Comparison of Carrier Deflection between MAG-TFET and MAG-FinFET
(2023-01-01)
Boonlua, Thanet
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Poyai, Amporn
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Phetchakul, Toempong
This paper is a comparison of the carrier deflection mechanism of a new magnetic sensor structure between the tunneling Field Effect Transistor (TFET) structure and the FinFET structures so-called MAG-TFET and MAG-FinFET.The device relies on carrier deflection from magnetically induced forces. The MAG-TFET current is caused by electron tunneling and drifting through the bulk under gate while the MAG-FinFET current is caused by the drift channel carrier from the inversion layer induced by gate voltages and there is also a bulk current beneath the substrate. The carrier deflection of the device is due to the current in the induced channel and current in the bulk. From the results, carrier deflection in the induced channel is better than in the bulk. The device sensitivity depends on the proportion of these two currents.
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Effect of aspect ratio on horizontal field magnetoresistance
(2019-01-01)
Phetchakul, Toempong
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Chemthung, Yothin
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Poyai, Amporn
This paper studies the aspect ratio (W/L), width (W) per length (L) of semiconductor resistor based on Hall effect current mode for horizontal magnetic field. At low concentration, 1014 cm-3, W/L < 1, the length has direct effect to magnetoresistance. The W/L = 1, the large resistor provides magnetioresistance better than small device. The W/L ˃ 1, the width has inversely proportional to magnetoresistance. The %MR(B) is around 1 % at 0.5 T, 1 mA. The long resistor (W/L < 1) can create ΔR in the order of several kilo ohms and several hundred ohms for short resistor (W/L > 1). The contribution factors ρ(L/W) for high ΔR are low concentration and aspect ratio (W/L < 1). The high %MR(B) is contributed by high current density of short structure (W/L > 1). At high concentration 1017 cm-3, aspect ratio and magnetoresistance are not sensitive to magnetic field because the Hall effect hardly occurs in high concentration material.
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Effect of horizontal magnetic field on magnetoresistance
(2018-07-02)
Chemthung, Yothin
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Phetchakul, Toempong
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Poyai, Amporn
The effect of horizontal magnetic field on magnetoresistance was studied by TCAD simulation. At low concentration 1014 and 1015 cm-3, the magnetoresistance linearly depends on magnetic field density and direction. The percent of magnetoresistance (%MR) of this study is less than 1 % at biased current 1 mA, 0.5 T. The unbalance between Lorentz's force FL and Hall electrical force FH causes this effect. The positive and negative % MR of magnetic field in -y and y direction are caused by FL > FH. At the high concentration 1016 - 1019 cm-3, the Lorentz's force and Hall electrical force are nearly equal. The magnetoresistance is a little bit positive both in -y and y magnetic field direction which are caused by FL > FH and FH > FL, respsctively.
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The Design of Metal-Semiconductor-Metal Structure Magnetic Sensor
(2016-01-01)
Sutthinet, Chalin
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Phetchakul, Toempong
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Luanatikomkul, Wittaya
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Poyai, Amporn
This paper presents the MSM structure magnetic detector device that normally detects the electromagnetic wave. The device is special design for magnetic field detector and still detects the electromagnetic wave as normal function. The schottky diode with the split contacts structure allows us to reach this target. The device operates with the saturation current and the magnetic response is the current difference between two contacts which is injected from one metal and deflected in semiconductor toward to another metal. From the simulation result by Sentaurus TCAD, the relative sensitivity is 14.19 mT-1 at the current 0.3 μA. This device is the first MSM multi-sensor for magnetic and electromagnetic wave detector.
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The effect injection width and temperature-offset compensation of magnetotransistor
(2011-12-01)
Leepattarapongpan, Chana
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Phetchakul, Toempong
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Penpondee, Naritchaphan
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Pengpad, Puttapon
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Srihapat, Arckom
This paper presents effect of injection witdh on Magnetotransistor. Emitter area was confined by LOCOS and the injection window size was varied from 4, 5 to 10 microns. With bias current of 3 mA the window size 4 micron gives best sensitivity at 10mV/T. Measument linearity is 0.1 % full scale. voltage gain of 10 was used for minimizing temperature coefficient to be around 7.9 mV/°C measured from 25 to 125 °C. Temperature coefficient divided by sensitivity give us a relative temperature sensitivity of 7.9 % T/°C. Second magnetic sensor device has been used for temperature compensation. The second device was config as magnetic field immune then it was used as a temperature offset voltage reference. The added module reduces overall temperature sensitivy down to 0.3 % T/°C. © 2011 Published by Elsevier Ltd.

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