KMITL

Permanent URI for this communityhttps://dspace.kmitl.ac.th/handle/123456789/1

Browse

Search Results

Now showing 1 - 9 of 9

Some of the metrics are blocked by your
consent settings
The magnetotransistor for 2-axis magnetic field measurement in CMOS technology
(2015-08-17)
Leepattarapongpan, Chana
;
Phetchakul, Toempong
;
Pengpad, Puttapon
;
Srihapat, Arckom
;
Jeamsaksiri, Wutthinan
This paper presents a magnetotransistor for detecting magnetic field in vertical and lateral directions (B<inf>Y</inf> and B<inf>Z</inf>) by relying on the difference between base and collector currents (ΔI<inf>CB</inf>). It was designed and fabricated using CMOS fabrication technology. The device structure consisted of one emitter, 4 collectors and 4 bases. The experiment showed that, at 10 mA of biasing current, the B<inf>Y</inf> and B<inf>Z</inf> direction sensitivity to magnetic field within the range of 0 - 400 mT are 0.7 and 1.35 %/T, respectively. The sensitivity at emitter current 20mA are 0.55 and 0.7 %/T for vertical and lateral magnetic field directions, respectively. This research on the magnetotransistor produced magnetic sensors with small size, high performance with wide range of applications.
Some of the metrics are blocked by your
consent settings
The increase sensitivity of PNP-magnetotransistor in CMOS technology
(2015-02-02)
Leepattarapongpan, Chana
;
Phetchakul, Toempong
;
Pengpad, Puttapon
;
Srihapat, Arckom
;
Jeamsaksiri, Wutthinan
This paper presents improve sensitivity of pnp-magnetotransistor for detect vertical magnetic field response. The device structure consisted of one emitter, four collectors and four bases. The four collectors are separate to form four terminals. The same is true for the four bases. The experiment showed that, at 2 and 4mA of biasing current, magnetic field in B<inf>Z</inf> direction sensitivity within the range of 0-400 mT are 0.045 and 0.09 mV/mT in single mode. The sensitivity of merge mode are 0.15 and 0.3 mV/mT. The magnetic field response of merge mode shows 4-time increase of the magnetic field sensitivity comparative to single mode.
Some of the metrics are blocked by your
consent settings
A merged magnetotransistor for 3-axis magnetic field measurement based on carrier recombination-deflection effect
(2014-01-01)
Leepattarapongpan, Chana
;
Phetchakul, Toempong
;
Penpondee, Naritchaphan
;
Pengpad, Puttapon
;
Srihapat, Arckom
This article presents a novel magnetotransistor based on carrier recombination-deflection effect for detecting magnetic field in three dimensions (B<inf>X</inf>, B<inf>Y</inf>, and B<inf>Z</inf>) by relying on the difference between base and collector currents (I<inf>CB</inf>). This device used low biasing current. It was designed and fabricated using CMOS fabrication technology. The device structure consisted of one emitter, 4 collectors and 4 bases. All four collector terminals were connected with each other. The same was true for the four base terminals. LOCOS oxide was grown to surround the emitter area to limit lateral carrier loss, and therefore reducing the overall biasing current. The experiment showed that, at 0.2 mA of biasing current, the B <inf>X</inf>, B<inf>Y</inf> and B<inf>-Z</inf> direction sensitivity to magnetic field within the range of 0-400 mT are 2, 5 and 14.5%/T, respectively. This research on the merged magnetotransistor produced magnetic sensors with small size, high performance with wide range of applications. © 2014 Elsevier Ltd.
Some of the metrics are blocked by your
consent settings
The low power 3D-magnetotransistor based on CMOS technology
(2011-12-01)
Leepattarapongpan, Chana
;
Phetchakul, Toempong
;
Penpondee, Naritchaphan
;
Pengpad, Puttapon
;
Srihapat, Arckom
This article presents a 3D magnetotransistor for detecting magnetic field in three dimensions (B <inf>X</inf>, B <inf>Y</inf>, and B <inf>Z</inf>) by relying on the difference between base and collector currents (ΔI <inf>CB</inf>). This device used low biasing current. It was designed and fabricated using CMOS fabrication technology. The device structure consisted of one emitter, 4 collectors and 4 bases. LOCOS oxide was grown to surround the emitter area to limit lateral carrier loss, and therefore reducing the overall biasing current. The experiment showed that, at 0.2 mA of biasing current, the BX, BY and BZ direction sensitivity to magnetic field within the range of 0 - 400 mT are 0.05, 0.07 and 0.145 mV/mT, respectively. © 2011 IEEE.
Some of the metrics are blocked by your
consent settings
The effect injection width and temperature-offset compensation of magnetotransistor
(2011-12-01)
Leepattarapongpan, Chana
;
Phetchakul, Toempong
;
Penpondee, Naritchaphan
;
Pengpad, Puttapon
;
Srihapat, Arckom
This paper presents effect of injection witdh on Magnetotransistor. Emitter area was confined by LOCOS and the injection window size was varied from 4, 5 to 10 microns. With bias current of 3 mA the window size 4 micron gives best sensitivity at 10mV/T. Measument linearity is 0.1 % full scale. voltage gain of 10 was used for minimizing temperature coefficient to be around 7.9 mV/°C measured from 25 to 125 °C. Temperature coefficient divided by sensitivity give us a relative temperature sensitivity of 7.9 % T/°C. Second magnetic sensor device has been used for temperature compensation. The second device was config as magnetic field immune then it was used as a temperature offset voltage reference. The added module reduces overall temperature sensitivy down to 0.3 % T/°C. © 2011 Published by Elsevier Ltd.
Some of the metrics are blocked by your
consent settings
The deflection length and emitter width on sensitivity of magnetotransistor
(2011-10-04)
Phetchakul, Toempong
;
Sottip, Panyakorn
;
Leepattarapongpan, Chana
;
Penpondee, Narichapan
;
Pengpad, Putapon
This paper presents a study of effect of deflection length and emitter width on sensitivity of magnetotransistor. The device has been fabrication on standard CMOS technology. It can detect magnetic field applied vertically to the chip. The structure consists of emitter (n-type), base (p-type) and collector (n-type) on silicon p-substrate. The device can sense magnetic field by Hall Effect theory and carrier deflection resulting to difference between base and collector current (ΔI<inf>CB</inf>) related to magnetic field (B <inf>Z</inf>) strength. From the experiment is comparing emitter width of 4, 5 and 10 micrometer at deflection length of 10 and 20 micrometer. The result shows that increase in injection emitter width cause to the sensitivity decreases and the deflection length of 20 micrometer is the best sensitivity. These results are very useful for developing the magnetotransistor for high sensitivity and performance. © 2011 IEEE.
Some of the metrics are blocked by your
consent settings
Use of neural network to model the FTIR spectra of PECVD silicon nitride films for cardiovascular pressure sensor applications
(2011-07-20)
Thongvigitmanee, Thongchai
;
Titiroongruang, Wisut
;
Srihapat, Arckom
;
Poyai, Amporn
In this paper, the empirical process models based on neural network are applied to discover the relationship between inputs and outputs of the plasma enhanced chemical deposition (PECVD) silicon nitride process. The design of experiments are based on a 2<sup>6-2</sup> fractional factorial experiment with four center replicate on six factors which are 1) the SiH<inf>4</inf> flow rate, 2) the NH<inf>3</inf> flow rate, 3) the N<inf>2</inf> flow rate, 4) the chamber pressure, 5) the radio frequency (RF) power/distance between the wafer base and shower gas, and 6) the deposition temperature. Once these experiments are performed, different neural networks are applied to identify these six inputs to the chemical bonding information from the FTIR measurements. The best performances of neural networks for each response are selected based on the smallest prediction error. Then the three-dimensional surface plots are generated to qualitatively interpret factor effects. The corrosion testing in saline solution based on a potentiostatic measurement of an aluminum film with the protective PECVD silicon nitride is demonstrated. This measurement could be used as a tool to identify the best dense PECVD silicon nitride film in order to improve the protective performance of the existing recipe. The silicon nitride film is used as the final passivation layer of the cardiovascular pressure sensor. © 2011 IEEE.
Some of the metrics are blocked by your
consent settings
The low power magnetotransistor based on the CMOS technology
(2010-07-30)
Sottip, Panyakorn
;
Phetchakul, Toempong
;
Leepattarapongpan, Chana
;
Penpondee, Naritchapan
;
Pengpad, Putapon
This paper presents the low power magnetotransistor detect magnetic field density in vertical direction. The devices can detect magnetic field by Lorentz force act upon minority carrier in base and difference between base and collector current (ΔI<inf>CB</inf>) was occurred. The structure of the low power magnetotransistor consist of one emitter, one collector and one base contact and designed decrease emitter injection area was 5 um and growth LOCOS oxide around emitter area. The structure was generated and simulated by TCAD Sentuarus simulation package and shows increase sensitivity of the low power magnetotransistor when compare the three terminals magneto-transistor. From the experiment, the low power magneto-transistor can operate at bias current less than 1 mA and high sensitivity is 20.64 mV/T. The device increase sensitivity 2.53 times at bias current 5 mA and decrease power consumption 85% when compare the three terminals magnetotransistor.
Some of the metrics are blocked by your
consent settings
Use of neural network to model the refractive property of PECVD silicon nitride films used to prevent water permeability of piezoresistive pressure sensor
(2010-01-01)
Thongvigitmanee, Thongchai
;
Srihapat, Arckom
;
Khompatraporn, Charoenchai
;
Jiraprayuklert, Adsada
;
Titiroongruang, Wisut
The application of plasma-enhanced chemical vapor deposition (PECVD) silicon nitride, commonly used as the passivation layer for ICs, has been applied to advanced sensors as well. For example, the silicon nitride film coating the piezoresistive pressure sensor of a blood pressure sensor is used to prevent water permeation when immerged into liquid. In this paper, we applied a combination of design-of-experiment (DOE) and neural network to reveal the relationship between input parameters and refractive indexes of PECVD silicon nitride films. We also introduced a metrology to quantify the water permeability into the film based on the corresponding resistance test structure measurement and the break down measurement. These two performance tests are further used to optimize the silicon nitride deposition. ©The Electrochemical Society.

KMITL

Browse

Filters

Settings

Sort By

Results per page

Search Results