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Firearm Training System by Laser gun
(2023-01-01)
Takopueak, Nopporn
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Sutthinet, Chalin
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Phetchakul, Toempong
This research presents a combat system with weapons, laser guns and electronic armor. Practicing firearms tactics results in shooting and maneuvering skills. The system consists of a laser gun that can determine the amount of ammunition used. The target of the armor has a sensor that receives laser light emitted by the gun. The guns and targets are controlled via a wireless network with a Node Micro Controller Unit (NodeMCU) connected to broker and can be displayed via computers, mobile phones and tablets. The IoT system uses protocol MQTT, the system used to store data on both sides of the device for response to the loss of network connection. The training is a gun fight between two players. The training is gun fighting between two players shooting guns against each other. The referee, commander and the audience can track the score of both players in real time. The training is safe to reduce the accidents of the practice also reduces the cost of training and can be practiced both indoors and outdoors.
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A novel dual magnetodiode for wireless sensor networks
(2020-08-14)
Sutthinet, Chalin
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Poyai, Amporn
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Phetchakul, Toempong
This paper presents a new magnetodiode, the so-called dual magnetodiode, for wireless sensor application. The device is a current mode which can be integrated with a chip compatible with modern low power, low voltage integrated circuit (IC). The structure and operation are completely different from a conventional magnetodiode. The structure is composed of two p–n junctions in that one region is common and the others are split terminals for output of differential current. The underlying mechanism is carrier deflection by induced force from a magnetic field. The carriers are injected from the common region by forward bias. The defection carriers diffuse, deflect, and recombine along substrate through split terminals according to direction and density of the magnetic field linearly and symmetrically. From the comparison of complementary structure of the split cathode and the split anode structure of L<inf>D</inf> = 50 µm, the bias current 1 mA and magnetic field 0.5 T, the relative sensitivities (S<inf>R</inf>) are 11.01 and 11.19 T−1, respectively. This device is a simple p–n junction structure which is compatible with all micro/nanotechnology.
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Magnetic finfet (MAGFinFET)
(2019-07-01)
Pamonchom, Chanvit
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Nakachai, Rattapong
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Sutthinet, Chalin
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Poyai, Amporn
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Phetchakul, Toempong
This paper presents magnetic sensor that uses FinFET structure. It is n channel FinFET with two separate contacts on the fin sides of drain that detects the vertical magnetic field. The gate length, fin height and fin width are 15, 15 and 5 nm, respectively. The device operates by Lorentz's force induced by magnetic field crossed perpendicular with drain current. It acts upon drain current and creates the drain differential current. The linearly dependence shows the sensitivity 181.6 nA/T, at current 1 mA. MAGFinFET is a low power and low voltage magnetic field sensor.
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The Gapless Design for High Sensitivity of Current Mode Dual Magnetodiode
(2019-04-26)
Sutthinet, Chalin
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Poonsawat, Sawatdipong
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Phetchakul, Toempong
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Poyai, Amporn
This paper presents the design for high sensitivity of magnetic detector device in current mode that uses Lorentz's force deflects current depend on the magnetic density via the dual magnetodiode structure. The current mode devices have two symmetry regions for carrier current receiving that injected from another opposite region. This design has a gap between two carrier current receiving regions that causes some loss and reduce sensitivity. The proposed design has one carrier current receiving region or gapless design that has no loss from gap. The sensitivities of gap 5, 2.5 and 0 μm at 1 mA are 0.0010, 0.0028 and 0.0065 T-1 for split cathode structure and 0.00084, 0.0020 and 0.0051 T-1 for split anode structure, respectively. This design can be applied to all current mode magnetic device for high sensitivity.
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Horizontal Magnetic Field MAGFET by Conventional MOSFET Structure
(2018-07-02)
Nakachai, Rattapong
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Poonsawat, Sawatdipong
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Sutthinet, Chalin
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Ruangphanit, Anucha
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Poyai, Amporn
The MOSFET used as magnetic field sensor is presented. It is a conventional structure that has a source, a gate, a drain and a substrate or body terminal which fabricated by standard CMOS process. It detects the horizontal y-direction magnetic field in parallel and perpendicular to currents. The device is biased for channel current and substrate current. The mechanism is Hall Effect in current mode. The induced Lorentz's force deflects currents between drain current and substrate forward current causes output differential current. The relation shows linearly dependence between magnetic field density and output differential current. The relative sensitivity depends on amount of bias currents.
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The Design of Metal-Semiconductor-Metal Structure Magnetic Sensor
(2016-01-01)
Sutthinet, Chalin
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Phetchakul, Toempong
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Luanatikomkul, Wittaya
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Poyai, Amporn
This paper presents the MSM structure magnetic detector device that normally detects the electromagnetic wave. The device is special design for magnetic field detector and still detects the electromagnetic wave as normal function. The schottky diode with the split contacts structure allows us to reach this target. The device operates with the saturation current and the magnetic response is the current difference between two contacts which is injected from one metal and deflected in semiconductor toward to another metal. From the simulation result by Sentaurus TCAD, the relative sensitivity is 14.19 mT-1 at the current 0.3 μA. This device is the first MSM multi-sensor for magnetic and electromagnetic wave detector.
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Multi-sensor diode for magnetic field and photo detection
(2015-07-01)
Sutthinet, Chalin
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Phetchakul, Toempong
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Luanatikomkul, Wittaya
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Poyai, Amporn
This research presents the multi-sensor that can detect both magnetic field and photo in the one device. The structure is based on p-n junction diode that is the fundamental of light detecting. The idea is how to design p-n junction for magnetic field. The dual magneto diode structure is a solution. It is designed to be suitable for these purposes. The device is specially designed and simulation by Sentaurus TCAD. It is fabricated by standard CMOS process and measured the responses of magnetic field and light. It shows a good device that detects two types of energy equally well. The relative sensitivity of magnetic response is 57 mT-1 at forward bias 1 mA and 128 mT-1 at reverse 8 nA. The dark current of device is 7.34 mA at standard test condition (25°C, AM 1.5, 100 W/m2). It is current mode device generating photo current and cathode current difference that is linearly induced from magnetic field.
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Monitoring of draft beer fermentation process by electronic nose
(2014-01-01)
Phetchakul, Toempong
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Sutthinet, Chalin
The draft beer fermentation process was monitored by using electronic nose. The system used the seven types of generally commercial metal oxide gas sensor in array. The selected process was one of the commercial processes and the data were gathered every hour for 10 day process which was 240 steps. It was processed for monitoring the chemical reaction for quality control. The results showed the good difference of the chemical reaction of the each day very clearly. The signature processing showed the variance 98.78%, 96.55% of the first component (PC1) and 2.3% of the second component (PC2), which was sufficiency for data explanation in 2D plot. It would be useful for production process to ensure a quality standard. © (2014) Trans Tech Publications, Switzerland.
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Investigation on temperature effect on alcohol sensing of multi-walled carbon nanotube
(2011-10-04)
Phetchakul, Toempong
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Sangnual, Assuchol
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Sutthinet, Chalin
This research studied the environment temperature affect to alcohol detecting and heated carbon nanotube film after alcohol detecting for a good chemical sensor application. The results showed that at the environment temperature below the room temperature (in this work -5 °C), the percentage of resistance changing is 15.70 % while at the 85 °C is 3.35 %. The heated CNT film after alcohol absorption during detecting time reduces the recovery time of the measurement cycle and reduces the minimum base resistance so increasing sensitivity of ΔR of CNT sensor. The results show that ΔR reaches to 76.22 % at environment temperature -5 °C, heating temperature 85 °C, and recovery time is faster than in the case of room temperature and no heating the film. © 2011 IEEE.
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Alcohol sensor based on multi-wall carbon nanotube
(2009-12-01)
Sutthinet, Chalin
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Sangnual, Assuchol
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Phetchakul, Toempong
We have demonstrated multi-walled carbon nanotube (MWCNTs) based sensors, which are capable of detecting alcohol vapor. The properties of the sensor were as a function of baking times at ethanol flow rate 200 cc/min and nitrogen gas flow rate 200 cc/min. Moreover, the various of baking times were observed that the highest sensitivity was obtained at baking time of 25 minutes at 70 ° C can be explained for residual of ethanol on the surface .It was found that the optimum operating at room temperature (25 °C). It is expected that many applications of CNTs-based sensors will be explored in future as the interest of the nanotechnology research in this field increases.

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