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Author: search.filters.author.Thiwawong, T.Subject: search.filters.subject.ZnO

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    Structural, Optical, and Electrical Properties of Sputtered ZnO Thin Films and Their Application in Transparent Memory Devices
    (2022-12-01)
    Tunhoo, B.
    ;
    Kaewkusonwiwat, S.
    ;
    Thiwawong, T.
    ;
    Onlaor, K.
    We report on the fabrication of ZnO thin films using a lab-made DC sputtering process. The ZnO films were prepared at several applied sputter voltages at fixed deposition times. The properties of the deposited films were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, field-emission scanning electron microscopy, and UV–visible spectroscopy. The ZnO thin films exhibited a polycrystalline phase in the dominant (100) plane, with film thicknesses in the order of approximately 50–80 nm. In addition, a transparent memory device based on the ZnO film was successfully fabricated with a device structure of ITO/ZnO/EVA/ITO. The fabricated device exhibited high optical transparency of approximately 70% in the visible light region. The fabricated memory device demonstrated memory properties with a maximum ON/OFF current ratio of 4.66 × 10<sup>3</sup> and showed good retention properties.
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    Electrical switching and conduction mechanisms of nonvolatile write-once-read-many-times memory devices with ZnO nanoparticles embedded in polyvinylpyrrolidone
    (2014-01-01)
    Onlaor, K.
    ;
    Thiwawong, T.
    ;
    Tunhoo, B.
    We reported on the influence of zinc oxide nanoparticles (ZnO NPs) on the electrical bistable behavior of nonvolatile write-once-read-many-times (WORM) memory devices based on an indium-tin oxide/polyvinylpyrrolidone (PVP):ZnO NPs/aluminum (ITO/PVP:ZnO/Al) structure. The maximum ON/OFF current ratio of the nonvolatile WORM memory devices was approximately 3 × 10<sup>3</sup> and the devices remained in the ON state even after the applied voltage was turned off. In addition, reliability studies for response time and once write/continuous read operations of the optimal ZnO NPs concentration are presented. The response times of both rise-time and fall-time were about 3 and 6 μs respectively. The conduction mechanisms of all voltage regions of the device were analyzed by theoretical models and electron trapping in the ZnO NPs of the electron tunneling among a PVP matrix was discussed. © 2014 Elsevier B.V. All rights reserved.
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    Study of PDMS compounds using the adhesion force determined by AFM force distance curve measurements
    (2010-02-05)
    Vanitparinyakul, S.
    ;
    Pattamang, P.
    ;
    Chanhom, A.
    ;
    Tunhoo, B.
    ;
    Thiwawong, T.
    The atomic force microscope(AFM) was used to perform surface force measurements in contact mode to investigate surface properties of model systems at the nanoscale. Three different Polydimethylsiloxane (PDMS) compounds were observed. The first consisted of pure PDMS, the second of PDMS blend with the nanoparticles Zinc Oxide(PDMS/ZnO) and the third of PDMS blend with the nanoparticles Zinc Oxide and toluene solvent(PDMS/ZnO/toluene), respectively. Surface morphology and the adhesion force were investigated by using atomic force microscopy. Force - distance curve measurement was performed in a contact mode, which used tip as silicon nitride. Moreover, we found a significantly different of the adhesion force when modified by nanoparticles ZnO and toluene solvent. © (2010) Trans Tech Publications.