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    Structural, Optical, and Electrical Properties of Sputtered ZnO Thin Films and Their Application in Transparent Memory Devices
    (2022-12-01)
    Tunhoo, B.
    ;
    Kaewkusonwiwat, S.
    ;
    Thiwawong, T.
    ;
    Onlaor, K.
    We report on the fabrication of ZnO thin films using a lab-made DC sputtering process. The ZnO films were prepared at several applied sputter voltages at fixed deposition times. The properties of the deposited films were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, field-emission scanning electron microscopy, and UV–visible spectroscopy. The ZnO thin films exhibited a polycrystalline phase in the dominant (100) plane, with film thicknesses in the order of approximately 50–80 nm. In addition, a transparent memory device based on the ZnO film was successfully fabricated with a device structure of ITO/ZnO/EVA/ITO. The fabricated device exhibited high optical transparency of approximately 70% in the visible light region. The fabricated memory device demonstrated memory properties with a maximum ON/OFF current ratio of 4.66 × 10<sup>3</sup> and showed good retention properties.
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    Preparing transparent cobalt-doped ZnO thin films by DC magnetron sputtering
    (2017-01-01)
    Panyajirawut, Pongladda
    ;
    Pratumsuwan, Nattha
    ;
    Meesombad, Kornkamon
    ;
    Thanawattana, Kridsana
    ;
    Chingsungnoen, Artit
    Thin films of cobalt-doped ZnO were prepared by DC magnetron sputtering on glasses. The cobalt dopant concentration was at 3%wt. The sputtering power was set at 200 watts and sputtered for 20 mins. All films are transparent. The films were then annealed at 100-500 °C under air atmosphere. Crystal structural and optical properties of the films were characterized by XRD and UV-Vis, respectively. The XRD patterns show peaks corresponding to (002) plane indicate thin films obtain hexagonal wurtzite structure. The effects of annealing temperature on crystal structure and optical properties were discussed.