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Defect distribution and yield analysis technique on silicon wafer
(2014-01-01)
Praepattarapisut, Warakorn
;
Pengchan, Weera
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Phetchakul, Toempong
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Poyai, Amporn
This paper presents the defect distribution and yield analysis on silicon wafer. The generation and recombination lifetime were the key parameters and obtained from the current- voltage and the capacitance-voltage of diode characteristics for forward bias. Then 3D contour maps were plotted as defect distribution and can be analyzed for the whole wafer which is useful for the yield analysis of the defects that were caused from fabrication process. © (2014) Trans Tech Publications, Switzerland.
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The effects of solvents on the properties of ultra-thin poly (methyl methacrylate) films prepared by spin coating
(2013-11-01)
Tippo, T.
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Thanachayanont, C.
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Muthitamongkol, P.
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Junin, C.
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Hietschold, M.
Poly (methyl methacrylate) (PMMA) is extensively used as an insulating layer in organic electronic devices. In this study, spin coating method was used to cast thin layers of PMMA for dielectric application from solutions in three different solvents, namely dimethylformamide (DMF), n-butyl acetate and toluene. The solvent's vapor pressure causes the solvent to vaporize at different rates leading to layer's distortion and different surface roughnesses. Preparation of suitable surface morphologies, for example, pinhole-free and crack-freewas studied. A step profilometer was used to measure the film thicknesses. Alternatively an equation correlating final film thickness to spin speed and solution concentration was proposed. A metal/insulator/metal parallel plate capacitor structurewas fabricated and the current density dependence on the applied electric fieldwas measured. The resulting low surface roughness, low leakage currents, high breakdown voltage, and high dielectric constant were obtained for the 100 nm-thick PMMA film prepared with DMF. © 2013 Elsevier B.V.
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Power loss analysis based on leakage currentin PN junctions
(2013-10-04)
Pengchan, Weera
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Phetchakul, Toempong
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Poyai, Amporn
This paper is proposed to analyze the power loss from leakage current in p-n junctions in case of non-uniform defects. The different geometry p-n junctions have been fabricated by a standard 0.8 micron CMOS technology. The diode fabricated by the ion implantation process with two different condition. The reverse current and voltage (I-V)characteristics at varied temperature of p-n junctions have been measured. The power loss coefficient can be extracted from the leakage current versus temperature. Form the derivative of leakage current with temperature, the power loss with prediction trend curve can be obtained. © (2013) Trans Tech Publications, Switzerland.
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Defects study by activation energy profile for lowering leakage current in p-n junction
(2011-01-01)
Srithanachai, Itsara
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Ueamanapong, Surada
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Rujanapich, Poopol
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Atiwongsangthong, Narin
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Niemcharoen, Surasak
Diode leakage current consists of diffusion (I<inf>d</inf>) and generation current (I<inf>g</inf>), which is strongly sensitive to the residual defect density. These defects can be studied by activation energy (E<inf>a</inf>). Therefore, this paper presents a method for calculating activation energy of silicon p-n junctions from volume generation current. It combines temperature-dependent current-voltage (I -V) and capacitance- voltage (C-V) measurements of diodes. The I<inf>g</inf> can be found from the volume leakage current by subtraction of the volume diffusion current, which is calculated while the depletion width is zero. The activation energy (E<inf>a</inf>) is derived from slope of an Arrhenius plot of I<inf>g</inf>. To derive the correct slope the temperature dependence of the depletion width, which is obtained from the corrected volume capacitance has been applied. The E<inf>a</inf> profile below junction has been shown. The lower E<inf>a</inf> value has been found near the junction, which may relate to the junction implantation. © (2011) Trans Tech Publications.
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Generation lifetime analysis of p-n junction x-ray detector
(2010-07-30)
Rujanapich, Poopol
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Poyai, Amporn
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Srithanachai, Itsara
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Pengpad, Putapon
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Hruanan, Charndet
Operation lifetime of the X-ray detector is the major factor that defines cost of detector or the actual operation cost of the detector. The purpose of this paper is to study the possibility of operation lifetime extension of the silicon x-ray detector. The study of the device's carrier generation lifetime before and after device exposed to the X-ray for 4 and 150 second at 40, 55 as well as 70 keV were conducted in this paper. The 1 mm<sup>2</sup> p-n junctions were fabricated by boron implantation process into phosphorus doped silicon wafer. A commercial x-ray source for dentist was used to generate x-ray in these experiments. The carrier generation lifetime was calculated from current-voltage (I-V) and capacitance-voltage (C-V) characteristics. The results show that the carrier generation lifetime increased after 4 second of x-ray irradiation at all three energy conditions but decreased back close to the original value after continue exposed devices for another 150 second. However, the lowest point of the generation lifetime after 4 second of x-ray irradiation is depending on the level of energy used. The results also presented that the defects that caused by x-ray irradiation are manageable.
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A study of phase to ground leakage current in 3-phase induction motor fed by switching voltage source
(2009-12-01)
Sarikprueck, Piampoom
;
Lumyong, Pichit
This paper presents a phase to ground leakage current in 3-phase induction motor caused by switching voltage source. The phase to ground leakage current of induction motor is effected by impedance of motor insulator which varied with switching frequency from voltage source. So various testing voltage sources included variable frequency square wave, variable frequency sine wave and dc source are supplied to induction motor in order to find out the impedance of motor insulator. Finally, test results of 1hp, 3hp and 5hp induction motors are shown and carried out to evaluate the phase to ground insulation motor impedance model.
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Extraction of defect in doping silicon wafer by analyzing the lifetime profile method
(2008-01-01)
Pengchan, W.
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Phetchakul, T.
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Poyai, A.
The total leakage current in silicon p-n junction diodes compatible with 0.8 μm CMOS technology is investigated. The generation lifetime is a key parameter for the leakage current, which can be obtained from the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics. As will be shown, the electrically active defect from ion implantation process generated in p-n junction can be extracted from the generation current density. © 2008 Trans Tech Publications, Switzerland.
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In-vivo measurement of swine myocardial resistivity
(2002-04-30)
Tsai, Jang Zern
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Will, James A.
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Stelle, Scott Hubbard Van
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Cao, Hong
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Tungjitkusolmun, Supan
We used a four-terminal plunge probe to measure myocardial resistivity in two directions at three sites from the epicardial surface of eight open-chest pigs in-vivo at eight frequencies ranging from 1Hz to 1 MHz. We calibrated the plunge probe to minimize the error due to stray capacitance between the measured subject and ground. We calibrated the probe in saline solutions contained in a metal cup situated near the heart that had an electrical connection to the pig's heart. The mean of the measured myocardial resistivity was 319 Ω cm at 1 Hz down to 166 Ωcm at 1 MHz. Statistical analysis showed the measured myocardial resistivity of two out of eight pigs was significantly different from that of other pigs. The myocardial resistivity measured with the resistivity probe oriented along and across the epicardial fiber direction was significantly different at only one out of the eight frequencies. There was no significant difference in the myocardial resistivity measured at different sites.

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