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Subject: search.filters.subject.MOSFETs

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    Implementation of the temperature and narrow channel dependence on threshold voltage model of NMOSFETs
    (2014-01-01)
    Ruangphanit, A.
    ;
    Sakuna, N.
    ;
    Niemcharoen
    ;
    Phinyo, B.
    ;
    Muanghlua, R.
    In this paper, a new simplify mismatch of temperature and narrow channel dependence of threshold voltage of NMOS developed from spice level 3 and BSIM3 are proposed. The I<inf>DS</inf>-V<inf>GS</inf> in linear region was used with a different channel width. The parameters extraction procedure is based on the measurement of the transconductance characteristics of MOSFET in linear region. In this model, the temperature coefficient for threshold voltage and the body-bias coefficient of threshold voltage of a big MOSFET and a narrow channel width of MOSFET are determined. The results show that, the deviation of threshold voltage from the predicted model compared with the experimental data is less than 5%. © 2014 IEEE.
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    A new mismatch model of temperature and narrow channel width dependence on threshold voltage of MOSFETs
    (2014-01-01)
    Ruangphanit, Anucha
    ;
    Sakuna, Natthaphon
    ;
    Niemcharoen, Surasak
    ;
    Muanghlua, Rangson
    A new mismatch model of temperature and narrow channel dependence on threshold voltage of MOSFETs and the parameter extraction method are proposed. A new model is developed from spice level3 and BSIM3 model. The IDS -VGS in linear region was used with a different of channel width. The threshold voltage parameters extraction procedure is based on the measurement of the tranconductance characteristics of MOSFET in linear region. In this predicted model, the temperature coefficient for threshold voltage and the body-bias coefficient of threshold voltage of a big MOSFET at various narrow channel width of MOSFET are determined. The results show that the deviations of experimentally measured threshold voltages of both devices from the predicted model are around 3%. © (2014) Trans Tech Publications, Switzerland.
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    ±1.5V high performance CMOS rail to rail voltage follower
    (2002-01-01)
    Kasemsuwan, V.
    ;
    Boonyaporn, P.
    ;
    Thanachayanont, A.
    A ±1.5 V high performance CMOS rail to rail voltage follower is presented. The circuit is based on the symmetrical class AB voltage follower and can operate under supply voltages of 1.5 V. The proposed circuit has power dissipation of 5.2 mW under quiescent condition and can drive ±1.25 V to 250 Ω load with a total harmonic distortion of less than 0.5 percent and cut-off frequency of 237 MHz. Although simple, the proposed circuit enables the output transistors to drive the load efficiently.